epitaxial silicon meaning in Chinese
外延硅
Examples
- Luminescent properties of c implanted epitaxial silicon
外延硅的光致发光特性 - In this paper , the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process . the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed . the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ) , x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
本论文提出了在蓝宝石上引入一层缓冲层材料形成复合衬底，采用常压化学气相淀积( apcvd )方法在其上异质外延生长sic薄膜的技术，分析了cvd法生长sic的物理化学过程，通过实验提出sic薄膜生长的工艺条件，并通过x射线衍射( xrd ) 、 x射线光电子能谱( xps ) 、光致发光谱( pl谱)和扫描电镜( sem )对外延薄膜的结构性质进行分析。 - Many factors which affect the epitaxy qualities , especially the porosity of porous silicon and growth temperature , have been studied in detail . it is found that the pre - oxidation of porous silicon can efficiently prevent the boron diffusion during epitaxy . the defaults along { 111 } are the main defects in epitaxial silicon layer
深入研究了影响外延的各种因素，特别是多孔硅的孔隙率和外延温度对外延层质量的影响，发现多孔硅的预氧化可以有效地阻止外延时b的扩散，外延层中主要的缺陷是沿着{ 111 }面生长的层错。